3 collec t or 2 emitter 1 base r1 bias resistor t ransistor npn silicon surface mount t ransistor with monolithic bias resistor network device marking and resistor values device marking r1 (k) r2 (k) shipping h6 3000/tape & reel leshan radio company, ltd. 1/2 ? 10000/tape & reel we declare that the material of product compliance with rohs requirements. ldtc115tet1g 1 ) b u i l t- in b i as res i st ors e n a b l e th e co nfi g ur ati on of a n in ve rte r circui t w i thou t con n e cting ex te rn al in pu t resistors (see equivalent circuit). 2 ) t he bi as r e s i sto r s c o n s ist of th i n -fi l m r e s i sto r s w i t h co mp le te i s ol a t i o n to al low posi t i v e bia s ing o f the i npu t. t h ey a l so ha ve the ad van t age of a l mo st co mpl e tely eliminating p a rasitic ef fect s. 3 ) o n l y th e on/ of f co n d it i ons n e ed to be set for o p e r a t i on, making the device design easy . inverter , interface, driver features ? ? applications ldtc115tet1g ldtc115tet3g h6 100 100 z a b solute maximum ratings (t a= 25 c) z electrical ch aracteristics (t a= 25 c) parameter limits 50 50 5 100 200 150 ? 55 to + 150 unit v v v ma mw c c collector-base voltage collector-emitter voltag emitter-base voltage collector current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i c pc tj tstg parameter symbol min. typ. max. unit conditions 50 50 5 ? ? ? 100 ? 70 ? ? ? ? ? ? 250 250 100 ? ? ? 0.5 0.5 0.3 600 ? 130 v v v a a v ? mhz k ? i c = 50 a i c = 1ma i e = 50 a v cb = 50v v eb = 4v i c /i b = 1ma/0.1ma i c = 1ma, v ce = 5v v ce = 10v, i e = ? 5ma, f = 100mhz ? ? collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current transfer ratio transition frequency input resistance ? characteristics of built-in transistor. bv cbo bv ceo bv ebo i cbo i ebo v ce(sat) h fe f t r 1 1 2 3 sc-89
leshan radio company, ltd. 3/3 ldtc115tet1g notes: 1.dimensioning and tolerancing per ansi y14.5m, 1982. 2.controlling dimension: millimeters 3.maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4.463c-01 obsolete, new standard 463c-02. sc-89
|
